📊 Technical Specifications (Typical):
Parameter | Details |
---|---|
MOSFET Device | 18N50 (500 V, 18 A) |
Configuration | Half-bridge or full-bridge (2 or 4 devices) |
Maximum Collector–Emitter Voltage (V<sub>DS</sub>) | 500 V |
Maximum Continuous Drain Current (I<sub>D</sub>) | 18 A |
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | ≤ 0.18 Ω |
Gate Drive Voltage | ±12 V–15 V |
Switching Frequency | Up to 50 kHz |
PCB Size | ~100 mm × 60 mm |
Thermal Management | Heatsink mounting holes & wide copper pours |
🛠️ Applications:
-
Inverter-based ARC, MIG, and TIG welding machines
-
High-voltage DC–DC converters and power supplies
-
UPS modules and battery chargers
-
Motor drive inverters for pumps and compressors
-
Renewable-energy microinverters and grid-tie systems
18N50 MOSFET Card
Engineered for efficient, high-voltage switching in demanding power-conversion applications.
o4-mini